Progress towards ultra-wideband AlGaN/GaN MMICs

This publication has 18 references indexed in Scilit:

• High power applications for GaN-based devices
  Solid-State Electronics, 1997
• Piezoelectric charge densities in AlGaN/GaN HFETs
  Electronics Letters, 1997
• Elastic strain relaxation and piezoeffect in GaN-AlN, GaN-AlGaN and GaN-InGaN superlattices
  Journal of Applied Physics, 1997
• Wide Bandgap Semiconductor Power Devices
  MRS Proceedings, 1997
• Wide bandgap semiconductor materials and devices
  IEEE Transactions on Electron Devices, 1996
• Microwave performance of GaN MESFETs
  Electronics Letters, 1994
• Wide bandgap compound semiconductors for superior high-voltage unipolar power devices
  IEEE Transactions on Electron Devices, 1994
• High electron mobility transistor based on a GaN-AlxGa1−xN heterojunction
  Applied Physics Letters, 1993
• Metal semiconductor field effect transistor based on single crystal GaN
  Applied Physics Letters, 1993
• Power semiconductor device figure of merit for high-frequency applications
  IEEE Electron Device Letters, 1989