High-performance dual-gate carbon nanotube FETs with 40-nm gate length
- 24 October 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 26 (11) , 823-825
- https://doi.org/10.1109/LED.2005.857704
Abstract
We report on a high-performance back-gated carbon nanotube field-effect transistor (CNFET) with a peak transconductance of 12.5 μS and a delay time per unit length of /spl tau//L=19 ps/μm. In order to minimize the parasitic capacitances and optimize the performance of scaled CNFETs, we have utilized a dual-gate design and have fabricated a 40-nm-gate CNFET possessing excellent subthreshold and output characteristics without exhibiting short-channel effects.This publication has 15 references indexed in Scilit:
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