Structural characterization of InGaAs/GaAs superlattices grown on misoriented substrates
- 1 March 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 118 (1-2) , 117-124
- https://doi.org/10.1016/0022-0248(92)90056-o
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- The crystal geometry of AlxGa1-xAs grown by MOCVD on offcut GaAs (100) substratesJournal of Crystal Growth, 1990
- The effects of substrate orientation on the optical properties of InGaAs epitaxial layers grown by low-pressure metal organic vapour-phase epitaxyCanadian Journal of Physics, 1989
- X-ray diffraction effects in Ga and Al arsenide structures MBE-grown on slightly misoriented GaAs (001) substratesJournal of Crystal Growth, 1989
- The effect of InP substrate misorientation on GaInAs-AlInAs interface and alloy qualityJournal of Applied Physics, 1988
- Terracing in strained-layer superlatticesJournal of Applied Physics, 1988
- On epilayer tilt in ZnSe/Ge heterostructures prepared by molecular-beam epitaxyJournal of Applied Physics, 1988
- Lattice relaxation mechanism of ZnSe layer grown on a (100) GaAs substrate tilted toward 〈011〉Journal of Applied Physics, 1988
- Effect of substrate tilting on molecular beam epitaxial grown AlGaAs/GaAs lasers having very low threshold current densitiesApplied Physics Letters, 1987
- Substrate Misorientation Effects On (A1,Ga)As And (Al,Ga)As/GaAs Structures Grown By Molecular Beam EpitaxyPublished by SPIE-Intl Soc Optical Eng ,1987
- Structure of vapor-deposited GaxIn1−xAs crystalsJournal of Applied Physics, 1974