Reflectivity of GaTe in the 1 to 35 eV range
- 28 January 1977
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 10 (2) , 343-352
- https://doi.org/10.1088/0022-3719/10/2/017
Abstract
The reflectivity of GaTe cleaved samples has been determined in the range 1-35 eV. A method is given by which a corrected curve of reflectivity in the whole spectral range may be deduced from experimental results of reflection and absorption obtained in different energy ranges. This method is used to calculate the reflectivity of GaTe below the absorption edge. The dielectric constants, the joint density of states and the number of effective electrons in the range 0-35 eV are reported. The effect of air exposure on the UV reflectivity has also been studied and an important surface alteration was found to occur in a few hours.Keywords
This publication has 7 references indexed in Scilit:
- An Investigation of the Electronic Structure of GaSe and GaTe by Photoelectron Spectroscopy, Using a Synchrotron Source, and Electron Energy Loss SpectroscopyPhysica Status Solidi (b), 1976
- Optical Properties and Collective Excitations in GaSe in the 2 to 80 eV RangePhysica Status Solidi (b), 1974
- Optical properties of the layer compound GaTePhysics Letters A, 1973
- Valence band structures and core-electron energy levels in the monochalcogenides of gallium. Photoelectron spectroscopic studyJournal of the Chemical Society, Faraday Transactions 2: Molecular and Chemical Physics, 1972
- Exciton binding energies of layer‐type semiconductors GaSe and GaTePhysica Status Solidi (b), 1971
- Some Optical Properties of Layer-Type Semiconductor GaTeJournal of the Physics Society Japan, 1970
- Optical absorption edge of GaTeJournal of Physics and Chemistry of Solids, 1962