Self-assembly patterning of epitaxial CoSi2 wires
- 1 January 2002
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 60 (1-2) , 239-245
- https://doi.org/10.1016/s0167-9317(01)00600-1
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Nanometer patterning of epitaxial CoSi2/Si(100) for ultrashort channel Schottky barrier metal–oxide–semiconductor field effect transistorsApplied Physics Letters, 1999
- Submicrometer patterning of cobaltdisilicide layers by local oxidationMicroelectronic Engineering, 1997
- Metal silicide patterning: a new approach to silicon nanoelectronicsNanotechnology, 1996
- Oxide mediated epitaxy of CoSi2 on siliconApplied Physics Letters, 1996
- New method for epitaxial heterostructure layer growthApplied Physics Letters, 1992
- Growth of epitaxial CoSi2 on (100)SiApplied Physics Letters, 1991