Gate turn off capability of insulated gate metal/amorphous Si/crystalline Si (p-n) switching device
- 7 October 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (15) , 1850-1852
- https://doi.org/10.1063/1.106192
Abstract
The gate turn off capability of a trench insulated gate metal/amorphous silicon (a‐Si:H)/crystalline silicon (c‐Si) (p‐n) heterojunction switching device is studied. Using a negative gate voltage to modulate the depletion width in the a‐Si:H region, and hence lowering the field for the multiplication of carriers, the heterojunction switching device can be gate turned off or even gate locked. Thus the device can be developed as a gate controllable light switch or light sensor.Keywords
This publication has 9 references indexed in Scilit:
- Electrical and Optical Characteristics of an a-Si:H/c-Si Heterojunction SwitchJapanese Journal of Applied Physics, 1990
- Amorphous-Si emitter heterojunction UHF power transistors for handy transmitterIEEE Electron Device Letters, 1990
- Threshold switching transient in metal/a-Si:H/c-Si(p-n) (MASS) heterojunction deviceSolid-State Electronics, 1990
- Switching characteristics of hydrogenated amorphous silicon/crystalline silicon heterojunction devicesApplied Physics Letters, 1990
- Amorphous Si/Si heterojunction microwave transistorsIEEE Electron Device Letters, 1989
- The use of amorphous-crystalline silicon heterojunctions for the application to an imaging deviceJournal of Applied Physics, 1987
- An amorphous SiC:H emitter heterojunction bipolar transistorIEEE Electron Device Letters, 1985
- Amorphous Si/Polycrystalline Si Stacked Solar Cell Having More Than 12% Conversion EfficiencyJapanese Journal of Applied Physics, 1983
- Identification of the Dangling-Bond State within the Mobility Gap of-Si: H by Depletion-Width-Modulated ESR SpectroscopyPhysical Review Letters, 1982