Threshold switching transient in metal/a-Si:H/c-Si(p-n) (MASS) heterojunction device
- 30 April 1990
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 33 (4) , 461-465
- https://doi.org/10.1016/0038-1101(90)90051-f
Abstract
No abstract availableKeywords
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