Numerical analysis of turn-off behavior of IGBT with an inductive load
- 25 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- A Performance Trade-Off for the Insulated Gate Bipolar Transistor: Buffer Layer Versus Base Lifetime ReductionIEEE Transactions on Power Electronics, 1987
- Optimization of epitaxial layers for power bipolar-MOS transistorIEEE Electron Device Letters, 1986
- Modeling the turn-off characteristics of the bipolar-MOS transistorIEEE Electron Device Letters, 1985