Donor-Electron Transitions between States Associated with the $X_{1 c}$ and $X_{3 c}$ Conduction-Band Minima in GaP

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15 December 1971

journal article
research article
Published by American Physical Society (APS) in Physical Review B

Vol. 4 (12) , 4449-4452
https://doi.org/10.1103/physrevb.4.4449

Abstract

Transitions from the ground states of Si, Te, and S donors associated with the lowest

X

conduction band have been observed to excited donor states associated with the next-higher

X

conduction band as well as transitions into the higher band. The

X_{3 c} - X_{1 c}

interband energy is found to be 355 ± 3 meV with the conductivity effective mass in the higher band being

(0.14 \pm 0.02) m_{0}

.

Keywords

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