Tuning AlAs-GaAs heterostructure properties by means of MBE-grown Si interface layers
- 1 July 1991
- journal article
- Published by Elsevier in Surface Science
- Vol. 251-252, 82-86
- https://doi.org/10.1016/0039-6028(91)90958-u
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Tuning AlAs-GaAs band discontinuities and the role of Si-induced local interface dipolesPhysical Review B, 1991
- Delta doping of III–V compound semiconductors: Fundamentals and device applicationsJournal of Vacuum Science & Technology A, 1990
- Controlled modification of heterojunction band lineups by diffusive intralayersJournal of Vacuum Science & Technology A, 1990
- Atomic diffusion and surface segregation of Si in δ-doped GaAs grown by gas source molecular beam epitaxyJournal of Vacuum Science & Technology B, 1990
- Modification of heterojunction band offsets by thin layers at interfaces: Role of the interface dipolePhysical Review B, 1990
- Dipole-Induced Changes of the Band Discontinuities at the Si-Si InterfacePhysical Review Letters, 1986
- Compositionally Graded Semiconductors and Their Device ApplicationsAnnual Review of Materials Science, 1986
- Doping interface dipoles: Tunable heterojunction barrier heights and band-edge discontinuities by molecular beam epitaxyApplied Physics Letters, 1985
- Synchrotron Radiation Photoemission Spectroscopy of Semiconductor Surfaces and InterfacesAnnual Review of Materials Science, 1984
- Semiconductor core-level to valence-band maximum binding-energy differences: Precise determination by x-ray photoelectron spectroscopyPhysical Review B, 1983