A silicon avalanche photodetector fabricated with standard CMOS technology with over 1 THz gain-bandwidth product

3 November 2010

journal article
Published by Optica Publishing Group in Optics Express

Vol. 18 (23) , 24189-24194
https://doi.org/10.1364/oe.18.024189

Abstract

We present a silicon avalanche photodetector (APD) fabricated with standard complementary metal-oxide-semiconductor (CMOS) technology without any process modification or special substrates. The CMOS-APD is based on N⁺/P-well junction, and its current-voltage characteristics, responsivity, avalanche gain, and photodetection frequency response are measured. Gain-bandwidth product over 1 THz is achieved with the CMOS-APD having avalanche gain of 569 and 3-dB photodetection bandwidth of 3.2 GHz.

Keywords

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