Hole-Injection-Type and Electron-Injection-Type Silicon Avalanche Photodiodes Fabricated by Standard 0.18-$\mu$m CMOS Process
- 8 April 2010
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 22 (12) , 932-934
- https://doi.org/10.1109/lpt.2010.2047389
Abstract
A hole-injection-type and an electron-injection-type Si avalanche photodiode (APD) were fabricated by a standard 0.18-μm complementary metal-oxide-semiconductor process. The avalanche amplifications are observed below 10 V of the bias voltage, and the maximum avalanche gains were 493 and 417 for the hole-injection-type and the electron-injection-type APDs, respectively. The maximum bandwidth is 3.4 GHz, and the gain-bandwidth products were 90 and 180 GHz for the hole-injection-type and the electron-injection-type APDs, respectively.Keywords
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