Critical epitaxial thicknesses for low-temperature (20–100 °C) Ge(001)2×1 growth by molecular-beam epitaxy
- 15 August 1993
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 74 (4) , 2512-2516
- https://doi.org/10.1063/1.354691
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
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