Photoemission spectroscopy of GaAs:As photodiodes
- 27 January 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (4) , 448-450
- https://doi.org/10.1063/1.106630
Abstract
We report on photoemission measurements of molecular-beam-epitaxy-grown GaAs p-i-n structures, in which the optically active insulating GaAs layer contains As precipitates (GaAs:As). GaAs:As is formed by low-temperature growth of GaAs at 225 °C, followed by an anneal at 600 °C. Layers grown in this way have been reported to be sensitive to subband-gap light. The measured barrier height of 0.7 eV, extracted from a well-behaved Fowler plot, indicates that the mechanism for photodetection involves arsenic clusters embedded in GaAs acting as internal Schottky barriers.Keywords
This publication has 7 references indexed in Scilit:
- 1.3- mu m P-i-N photodetector using GaAs with As precipitates (GaAs:As)IEEE Electron Device Letters, 1991
- Infrared response from metallic particles embedded in a single-crystal Si matrix: The layered internal photoemission sensorApplied Physics Letters, 1990
- Arsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxyApplied Physics Letters, 1990
- Absolute pressure dependence of the second ionization level of EL2 in GaAsApplied Physics Letters, 1990
- Structural properties of As-rich GaAs grown by molecular beam epitaxy at low temperaturesApplied Physics Letters, 1989
- New MBE buffer used to eliminate backgating in GaAs MESFETsIEEE Electron Device Letters, 1988
- Reduced reverse bias current in Al–GaAs and In0.75Ga0.25As–GaAs junctions containing an interfacial arsenic layerJournal of Vacuum Science & Technology B, 1987