The spatial resolution limit of electron lithography
- 1 October 1983
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 1 (2) , 103-119
- https://doi.org/10.1016/0167-9317(83)90024-2
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Condenser Aperture Misalignment and Solute Profile Asymmetries in STEM X-ray MicroanalysisJournal of Microscopy, 1983
- 10-nm linewidth electron beam lithography on GaAsApplied Physics Letters, 1983
- Resolution Limits of PMMA Resist for Exposure with 50 kV ElectronsJournal of the Electrochemical Society, 1981
- High resolution electron-beam lithography on thin filmsJournal of Vacuum Science and Technology, 1979
- Impact of electron scattering on linewidth control in electron-beam lithographyJournal of Vacuum Science and Technology, 1979
- Proximity effect in electron-beam lithographyJournal of Vacuum Science and Technology, 1975
- Comprehensive optical and collision data for radiation action. II. ArThe Journal of Chemical Physics, 1975
- An exposure model for electron-sensitive resistsIEEE Transactions on Electron Devices, 1974
- Model for Exposure of Electron-Sensitive ResistsJournal of Vacuum Science and Technology, 1973
- Zur Theorie des Durchgangs schneller Korpuskularstrahlen durch MaterieAnnalen der Physik, 1930