Impurity band inp-type β-
- 15 July 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 50 (4) , 2653-2656
- https://doi.org/10.1103/physrevb.50.2653
Abstract
The results of transport measurements on p-type β- single crystals in the temperature range of 30–300 K are presented and explained assuming the existence of an impurity band and an additional deep acceptor level. The values of the activation energies of the shallow and deep acceptors, their concentrations, as well as the concentration of the compensating donors and the density-of-states effective hole mass were calculated.
Keywords
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