Electrical properties of β-FeSi2/Si heterojunctions
- 15 November 1991
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (10) , 5423-5426
- https://doi.org/10.1063/1.350372
Abstract
The electrical properties of heterojunctions of polycrystalline films of β‐FeSi2 grown on n‐type single‐crystal silicon are investigated. The dark current‐voltage and capacitance‐voltage characteristics are measured over a wide temperature range. Analysis of the data reveal that multistep tunneling is the current conduction mechanism due to a high density of interface defects.This publication has 15 references indexed in Scilit:
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