Growth mechanism and morphology of semiconducting FeSi2 films
- 1 July 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (1) , 93-96
- https://doi.org/10.1063/1.347159
Abstract
Semiconducting β-FeSi2 films grown on (100)-oriented Si and on (11̄02)-sapphire substrates are investigated by x-ray diffraction, Nomarski optical microscopy, stress, and surface roughness measurements. As a result of an exothermic, nucleation controlled reaction, we observe a characteristic ring-shaped surface pattern of the silicide. Surface roughness and stress in β-FeSi2 are less pronounced for films grown at lower temperatures and cooling rates. Sapphire substrates result in smoother surfaces than Si due to the match of the thermal expansion coefficient of sapphire to the silicides.This publication has 23 references indexed in Scilit:
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