Optical and electrical characterization of β-FeSi2 epitaxial thin films on silicon substrates
- 1 January 1991
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 69 (1) , 352-357
- https://doi.org/10.1063/1.347720
Abstract
Electrical measurements have been carried out on epitaxial FeSi2 layers on silicon substrates, the silicide thickness being either 180 or 350 Å. A direct gap of 0.85 eV was measured by optical absorption. Current‐voltage characteristics of mesa‐structures Cr/Fe/FeSi2/Si show a p‐type semiconductor behavior. Capacitance‐voltage and capacitance‐temperature data at different frequencies indicate a large response of deep levels or interface states. Admittance spectroscopy yields the activation energy and capture cross section of two levels. Finally an energy‐band diagram is proposed.This publication has 14 references indexed in Scilit:
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