Characterization of semiconducting iron disilicide obtained by LRP/CVD
- 1 January 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 39 (1) , 200-201
- https://doi.org/10.1109/16.108230
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Optical and electrical characterization of β-FeSi2 epitaxial thin films on silicon substratesJournal of Applied Physics, 1991
- Electronic properties of semiconducting FeSi2 filmsJournal of Applied Physics, 1990
- Growth mechanism and morphology of semiconducting FeSi2 filmsJournal of Applied Physics, 1990
- Epitaxial films of semiconducting FeSi2 on (001) siliconApplied Physics Letters, 1990
- Semiconducting silicide-silicon heterojunction elaboration by solid phase epitaxyApplied Physics Letters, 1989
- Measurement of the band gap of GexSi1−x/Si strained-layer heterostructuresApplied Physics Letters, 1985
- Optical properties of semiconducting iron disilicide thin filmsJournal of Applied Physics, 1985
- Limited reaction processing: Silicon epitaxyApplied Physics Letters, 1985