Lattice defects in I-III-VI2 compounds
- 1 January 1986
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 47 (1) , 99-104
- https://doi.org/10.1016/0022-3697(86)90183-6
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Luminescence of CuGaS2Journal of Applied Physics, 1985
- Radiative recombination and shallow centers in CuInSe2Journal of Applied Physics, 1984
- Size effect on different impurity levels in semiconductorsSolid State Communications, 1984
- Influence of intrinsic defects on the electrical properties of AIBIIIC compoundsCrystal Research and Technology, 1983
- Vacancy formation enthalpies in AIBIIIC chalcopyrite semiconductorsCrystal Research and Technology, 1983
- Luminescence and lattice defects in Cu In S2Journal of Physics and Chemistry of Solids, 1981
- Edge emission of CuGaSe2Journal of Applied Physics, 1980
- Aspects of the band structure of CuGaand CuGaPhysical Review B, 1975
- Room-Temperature Electrical Properties of Ten I-III-VI2 SemiconductorsJournal of Applied Physics, 1972
- Helicons and Nonresonant Cyclotron Absorption in Semiconductors. II.Physical Review B, 1969