10000-Hour Continous CW Operation of InGaAsP/InP Heterostructure Lasers with a Buffer Layer at Room Temperature
- 1 May 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (5)
- https://doi.org/10.1143/jjap.20.997
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- New 1.6 μm wavelength GaInAsP/InP buried heterostructure lasersElectronics Letters, 1980
- InP/GaInAsP Buried Heterostructure Lasers of 1.5 µm RegionJapanese Journal of Applied Physics, 1980
- Effects of Double-Cladding Structure on LPE-Grown InGaAsP/InP Lasers in the 1.5 µm RangeJapanese Journal of Applied Physics, 1980
- Room Temperature CW Operation of GaInAsP/InP DH Laser Emitting at 1.51 µmJapanese Journal of Applied Physics, 1979
- Room-temperature c.w. operation of InP/InGaAsP/InP double heterostructure diode lasers emitting at 1.55 μmElectronics Letters, 1979
- Room temperature c.w. operation of InGaAsP/InP heterostructure lasers emitting at 1.56 μmElectronics Letters, 1979
- 10 000-h continuous CW operation of In1-xGaxAsyP1-yInP DH lasers at room temperatureIEEE Journal of Quantum Electronics, 1979
- Ultimate low-loss single-mode fibre at 1.55 μmElectronics Letters, 1979