Analysis of laser emission in Ho3+-doped materials
- 1 March 1975
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 11 (3) , 97-99
- https://doi.org/10.1109/jqe.1975.1068573
Abstract
The oscillator strengths, transition rates, and branching ratios associated with known and potential laser transitions in trivalent holmium are discussed. Recently reported laser transitions between the5F5and5I5energy manifolds are found to have an abnormally low average oscillator strength, and an alternative explanation of the laser observation is suggested.Keywords
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