Diode detection of information stored in electron-beam-addressed MOS structure
- 1 May 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 24 (9) , 419-421
- https://doi.org/10.1063/1.1655243
Abstract
Charge stored in an insulating layer on a semiconductor can influence the field at the surface of the semiconductor and consequently control the surface recombination velocity. This paper describes the use of this effect to control the current in a reverse‐biased p‐n junction in the semiconductor. When an electron beam is used to write and read the stored charge, the effect can be used to produce high‐resolution high‐gain devices that have a variety of potential uses in information‐storage applications. Experiments demonstrating this effect are described.Keywords
This publication has 4 references indexed in Scilit:
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- Effects of ionizing radiation on oxidized silicon surfaces and planar devicesProceedings of the IEEE, 1967
- Surface Effects of Radiation on Semiconductor Devices*Bell System Technical Journal, 1967