ELECTRON BEAM DETECTION OF CHARGE STORAGE IN MOS CAPACITORS
- 15 February 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 16 (4) , 147-149
- https://doi.org/10.1063/1.1653137
Abstract
A method for destructive detection of the state of charge storage in a metal‐SiO2‐Si capacitor is presented. This method is based on the modulation by the charge of the efficiency of separation of electron‐hole pairs which are generated by the penetration of an electron beam into the capacitor.Keywords
This publication has 6 references indexed in Scilit:
- Selective Electron-Beam Irradiation of Metal-Oxide-Semiconductor StructuresJournal of Applied Physics, 1968
- An electron beam activated switch and associated memoryProceedings of the IEEE, 1968
- IMAGING AND STORAGE WITH A UNIFORM MOS STRUCTUREApplied Physics Letters, 1967
- Effects of ionizing radiation on oxidized silicon surfaces and planar devicesProceedings of the IEEE, 1967
- InSb MOS INFRARED DETECTORApplied Physics Letters, 1967
- A simple method for preparing "Sodium-free" thermally grown silicon dioxide on siliconProceedings of the IEEE, 1967