Low resistance Ti or Co salicided raised source/drain transistors for sub-0.13 μm CMOS technologies

This publication has 2 references indexed in Scilit:

• Salicides for 0.10 /spl mu/m gate lengths: a comparative study of one-step RTP Ti with Mo doping, Ti with pre-amorphization and Co process
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1997
• Raised source/drain MOSFET with dual sidewall spacers
  IEEE Electron Device Letters, 1991