SDX: a novel self-aligned technique and its application to high-speed bipolar LSIs
- 1 October 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (10) , 1601-1608
- https://doi.org/10.1109/16.7360
Abstract
A novel polysilicon selective-deposition method named selective deposition by exdiffusion (SDX) and a self-aligned bipolar LSI process using the SDX process are presented. The SDX process makes it possible to selectively form polysilicon patterns on silicon oxide patterns but not on silicon nitride patterns, where these patterns are formed on a silicon substrate surface. Bipolar transistor self-alignment between the isolation pattern and the entire transistor active region can be achieved in a 0.85-μm silicon island by the SDX process. A transistor with a 12-GHz cutoff frequency, an LCML gate with a propagation delay time of 59 ps/gate, and a 1-kb ECL (emitter-coupled logic) memory with an access time of 0.95 ns have been achievedKeywords
This publication has 4 references indexed in Scilit:
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