Influence of mirror reflectivity on laser performance of very-low-threshold vertical-cavity surface-emitting lasers

1 November 1995

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters

Vol. 7 (11) , 1228-1230
https://doi.org/10.1109/68.473454

Abstract

The influeuce of mirror reflectivity on laser performance of InGaAs-GaAs vertical-cavity surface-emitting lasers fabricated by selective oxidation is investigated by the stepwise change of the number of pairs in top mirror stack after device fabrication. Devices with 18-pair stacks in the top mirror, which is the optimized number of pairs in this structure, show an output power over 1.9 mW and a slope efficiency of 55% while maintaining a low threshold current of 212 /spl mu/A. The analysis of the threshold current and differential efficiency related to mirror reflectivity shows an internal quantum efficiency of 95%, an internal round-trip loss of 0.072, and a transparency current density of 71 A/cm/sup 2/.

Keywords

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