Chemical Beam Epitaxy Growth and Characterization of GaNAs/GaAs
- 1 March 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (3S)
- https://doi.org/10.1143/jjap.37.1603
Abstract
A GaNAs layer has been grown on a GaAs substrate using chemical beam epitaxy (CBE) with a radio frequency (RF) radical nitrogen source for the first time. The nitrogen (N) composition was well-controlled by the N2 flow rate and was increased up to 2.7%, maintaining a good crystal quality. The maximum N composition was estimated to be 20% by a secondary ion mass spectroscopy (SIMS) measurement. The N composition estimated from both X-ray diffraction measurements and SIMS measurements were in good agreement. This shows that the N composition can simply be determined by X-ray diffraction measurements. The optical absorption measurement of the grown GaNAs was also carried out. The bandgap bowing parameter of GaNAs was found to be not a constant and varied between 15–23 eV for N<2.7%. An empirical expression of bandgap vs. composition was obtained for a N composition below 3%.Keywords
This publication has 18 references indexed in Scilit:
- Room-temperature pulsed operationof 1.3 µm GaInNAs/GaAs laser diodeElectronics Letters, 1997
- Tight-Binding Calculation of Electronic Structures of InNAs Ordered AlloysJapanese Journal of Applied Physics, 1997
- MOCVD growth of InAsN for infrared applicationsSolid-State Electronics, 1997
- Photoluminescence excitation spectroscopy of GaP1−xNx alloys: conduction-band-edge formation by nitrogen incorporationJournal of Crystal Growth, 1997
- Localization and percolation in semiconductor alloys: GaAsN vs GaAsPPhysical Review B, 1996
- GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature PerformanceJapanese Journal of Applied Physics, 1996
- Electronic structure and phase stability ofalloysPhysical Review B, 1995
- Intermediate range between N-doped GaP and GaP1-xNx alloys: difference in optical propertiesJournal of Crystal Growth, 1994
- Gas-Source Molecular Beam Epitaxy of GaNxAs1-x Using a N Radical as the N SourceJapanese Journal of Applied Physics, 1994
- Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy LayersJapanese Journal of Applied Physics, 1992