Tight-Binding Calculation of Electronic Structures of InNAs Ordered Alloys
- 1 March 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (3B) , L320
- https://doi.org/10.1143/jjap.36.l320
Abstract
The electronic structure of InN x As1- x ordered alloys (x=0.25, 0.5 and 0.75) are calculated based on a semi-empirical tight-binding method. The alloy is found to have direct band gaps throughout the entire composition range. The band-gap bowing parameter c in E g=0.36+1.53x+c x(x-1) eV of the alloy InN x As1- x is larger with larger valence-band discontinuity between InAs and InN, and is 4.22 eV if a theoretical value of 3.79 eV given by Harrison's theory is assumed.Keywords
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