Hall Effect in Vnear the Semiconductor-to-Metal Transition
- 1 March 1973
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 7 (5) , 2109-2111
- https://doi.org/10.1103/physrevb.7.2109
Abstract
Hall-effect measurements as a function of temperature have been made on single-crystal samples of V at temperatures both above and below the semiconductor-to-metal transition temperature; the Hall mobility in the semiconducting phase was approximately 0.5 /V sec and in the metallic phase approximately 0.35 /V sec.
Keywords
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