InAs/GaInAs quantum dot DFB lasers emitting at1.3 µm
- 10 May 2001
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 37 (10) , 634-636
- https://doi.org/10.1049/el:20010420
Abstract
Singlemode operation of 1.3 µm InAs/GaInAs quantum dot lasers has been achieved using the concept of complex coupled distributed feedback. Mode selection was realised by laterally patterned metal gratings. At room temperature the lasers show stable singlemode emission with sidemode suppression ratios of up to 55 dB, threshold currents as low as 17 mA and output powers of up to 8 mW under continuous wave operation.Keywords
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