InGaAs/AlGaAs quantum dot DFB lasers operatingup to 213°C
- 11 November 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 35 (23) , 2036-2037
- https://doi.org/10.1049/el:19991352
Abstract
The authors have investigated complex coupled distributed feedback lasers based on a single layer of InGaAs/GaAs self-organised quantum dots grown by molecular beam epitaxy. Metal gratings patterned laterally in a ridge waveguide laser provide feedback for singlemode operation. Threshold currents of 14 mA, differential efficiencies of 0.33 W/A and sidemode suppression ratios of > 50 dB have been obtained. Monomode operation was observed for temperatures from 20 to 213°C.Keywords
This publication has 9 references indexed in Scilit:
- High-performance GaInAs/GaAs quantum-dot lasers based on a single active layerApplied Physics Letters, 1999
- Low-threshold high-quantum-efficiency laterally gain-coupled InGaAs/AlGaAs distributed feedback lasersApplied Physics Letters, 1999
- 1.3 μm room-temperature GaAs-based quantum-dot laserApplied Physics Letters, 1998
- Emission spectra and mode structure of InAs/GaAs self-organized quantum dot lasersApplied Physics Letters, 1998
- High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laserJournal of Applied Physics, 1998
- A strained-layer InGaAs-GaAs asymmetric cladding gain-coupled DFB laser with titanium surface gratings by metalorganic chemical vapor depositionIEEE Photonics Technology Letters, 1997
- Room temperature CW operation at the ground stateof self-formed quantum dot lasers with multi-stacked dot layerElectronics Letters, 1996
- High-temperature single-mode operation of 1.3-μm strained MQW gain-coupled DFB lasersIEEE Photonics Technology Letters, 1995
- Temperature Range for DFB Mode Oscillation in 1.5 µm InGaAsP/InP DFB LasersJapanese Journal of Applied Physics, 1986