Stark Ladder Photoluminescence of X States in GaAs/AlAs Type-I Superlattices
- 1 March 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (3S)
- https://doi.org/10.1143/jjap.36.1884
Abstract
We report on an observation of Stark ladder photoluminescence (PL) of X states in GaAs/AlAs type-I superlattices. The PL line exhibits a linear blue shift corresponding to one half the period of the superlattice with increasing bias voltage. The PL intensity then becomes maximum when X1-Γ2 mixing occurs. Carrier sweep-out from the X states is drastically improved by the X1-Γ2 mixing. These results demonstrate that optical properties even in type-I superlattices are seriously affected by the mixing of X states with a higher Γ subband under an electric field.Keywords
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