10 Gbit/s long-wavelength monolithic integratedoptoelectronic receiver grown on GaAs
- 15 February 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (4) , 391-392
- https://doi.org/10.1049/el:19960245
Abstract
The first 10 Gbit/s long-wavelength monolithic integrated photoreceiver grown on GaAs substrate has been fabricated using a 0.3 µm gate length AlGaAs/GaAs HEMT process. At a wavelength of 1.3 µm the integrated InGaAs MSM photodiode has a DC responsivity of 0.34 A/W. The photoreceiver bandwidth is 7.1 GHz and its sensitivity is better than –14.7 dBm (BER = 10-9).Keywords
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