1.3 µm monolithic integrated optoelectronicreceiver using anInGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on GaAs

5 January 1995

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 31 (1) , 67-68
https://doi.org/10.1049/el:19950004

Abstract

The first 1.3 µm monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on a GaAs substrate has been fabricated. At each differential output of the implemented multistage amplifier the transimpedance is 26.8 kΩ (into 50 Ω). The bandwidth of 430 MHz implies suitability for transmission rates up to 622 Mbit/s.

Keywords

This publication has 5 references indexed in Scilit:

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