Long-Wavelength Receiver Optoelectronic Integrated Circuit on 3-Inch-Diameter GaAs Substrate Grown by InP-on-GaAs Heteroepitaxy

Publisher Website
Google Scholar
Abstract
A monolithic long-wavelength receiver optoelectronic integrated circuit (OEIC), which integrates an InGaAs PIN-photodiode (PD) and a GaAs field-effect transistor (FET), has been successfully fabricated on a 3-inch-diameter GaAs substrate using InP-on-GaAs heteroepitaxy, by metalorganic chemical vapor deposition (MOCVD) and conventional GaAs-IC process technology. The epitaxial quality of the PD layer has been improved by use of a low-temperature-grown buffer layer, thermal cyclic annealing and an InGaAs/InP strained-layer superlattice. The integrated PD has low dark current of 10 nA at -5 V bias voltage, and exhibited stable operation at 175°C. The fabricated receiver OEIC has 1.4 GHz bandwidth and sensitivity of -28.1 dBm at the transmission rate of 622 Mb/s with bit error rate of 10-9, which is applicable to practical subscriber optical communication systems.