Photoluminescence Imaging of Spatial Distribution of Recombination Centers in Cubic SiC
- 1 January 1989
- book chapter
- Published by Springer Nature in Springer Proceedings in Physics
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Spatial distribution of defects in GaAs:Te wafers studied by cathodoluminescenceJournal of Applied Physics, 1988
- Photoluminescence tomography as a method to image point-defect distributions in crystals: Nitrogen-vacancy pairs in synthetic diamondsJournal of Applied Physics, 1988
- Improved β-SiC heteroepitaxial films using off-axis Si substratesApplied Physics Letters, 1987
- Antiphase boundaries in epitaxially grown β-SiCApplied Physics Letters, 1987
- Interface structures in beta-silicon carbide thin filmsApplied Physics Letters, 1987
- Space and Time Resolved Photoluminescence of Defects at Dislocations in In-Alloyed GaAs Substrate MaterialMRS Proceedings, 1987
- Surface morphology of cubic SiC(100) grown on Si(100) by chemical vapor depositionJournal of Crystal Growth, 1986
- Spatial distribution of 0.68-eV emission from undoped semi-insulating gallium arsenide revealed by high resolution luminescence imagingApplied Physics Letters, 1985
- OPTICAL IMAGING OF DISLOCATIONS IN STRAINED—LAYER SUPERLATTICES AND LATTICE—MISMATCHED EPILAYERSMRS Proceedings, 1985
- Luminescence of Donor-Acceptor Pairs in Cubic SiCPhysical Review B, 1970