Nitrous oxide gas phase chemistry during silicon oxynitride film growth
- 31 December 1998
- journal article
- Published by Elsevier in Progress in Surface Science
- Vol. 59 (1-4) , 103-115
- https://doi.org/10.1016/s0079-6816(98)00039-2
Abstract
No abstract availableKeywords
This publication has 36 references indexed in Scilit:
- The composition of ultrathin silicon oxynitrides thermally grown in nitric oxideJournal of Applied Physics, 1997
- Oxide, interface, and border traps in thermal, N2O, and N2O-nitrided oxidesJournal of Applied Physics, 1996
- Controlled nitrogen incorporation at the gate oxide surfaceApplied Physics Letters, 1995
- Growth and surface chemistry of oxynitride gate dielectric using nitric oxideApplied Physics Letters, 1995
- N depth profiles in thin SiO2 grown or processed in N2O: The role of atomic oxygenApplied Physics Letters, 1995
- Rapid thermal oxidation of silicon in N2O between 800 and 1200 °C: Incorporated nitrogen and interfacial roughnessApplied Physics Letters, 1994
- Effects of NH3 nitridation on oxides grown in pure N2O ambientApplied Physics Letters, 1994
- Role of interfacial nitrogen in improving thin silicon oxides grown in N2OApplied Physics Letters, 1993
- Highly Reliable Thin Nitrided SiO2 Films Formed by Rapid Thermal Processing in an N2O AmbientJapanese Journal of Applied Physics, 1990
- Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2OApplied Physics Letters, 1990