Effects of NH3 nitridation on oxides grown in pure N2O ambient

Abstract
Effects of NH3 nitridation on the chemical and electrical properties of N2O oxides have been studied. Compared with NH3‐nitrided SiO2, NH3 nitridation does not degrade the electrical properties of N2O oxides, thus resulting in superior impurity diffusion barrier properties, while preserving excellent interface immunity to hot‐carrier injection and much lower charge trapping. Correlation studies between the chemical and electrical properties of NH3‐nitrided N2O and NH3‐nitrided SiO2 have been done to explain these results.