Fabrication and performance of selective HSG storage cells for 256 Mb and 1 Gb DRAM applications
- 1 March 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 47 (3) , 584-592
- https://doi.org/10.1109/16.824734
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Rugged surface polycrystalline silicon film deposition and its application in a stacked dynamic random access memory capacitor electrodeJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Process and device technologies for 1 Gbit dynamic random-access memory cellsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- Hemispherical grained Si formation on in-situ phosphorus doped amorphous-Si electrode for 256 Mb DRAM's capacitorIEEE Transactions on Electron Devices, 1995