Elucidation of x-ray diffraction data on the nature of the ordering of GaInP2 and how the ordering relates to changes in the optical properties
- 20 February 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (8) , 718-720
- https://doi.org/10.1063/1.101470
Abstract
The relationship between anomalous changes in the band gap and ordering of the group III sublattice of GaInP2 is discussed. X‐ray diffraction data are reported for the first time which show significant long‐range order of the CuPt type, i.e., alternating {111} Ga and In planes, in agreement with published electron diffraction data. However, the x‐ray and electron diffraction data differ as to which of the four possible orientations are observed and as to the directions of the streaks. No correlation was observed between the long‐range order parameter and the band‐gap anomalies.Keywords
This publication has 21 references indexed in Scilit:
- Observation of Strong Ordering inalloy semiconductorsPhysical Review Letters, 1988
- Direct observation of ordering in (GaIn) PJournal of Materials Research, 1988
- Ordered structure in OMVPE-grown Ga0.5In0.5PJournal of Crystal Growth, 1988
- Chemical ordering in GaxIn1−xP semiconductor alloy grown by metalorganic vapor phase epitaxyApplied Physics Letters, 1988
- Ordering in GaAs1−xSbx grown by molecular beam epitaxyApplied Physics Letters, 1987
- Atomic Structure of Ordered InGaP Crystals Grown on (001)GaAs Substrates by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1987
- Long-range order in InxGa1−xAsApplied Physics Letters, 1987
- Atomic ordering in As and alloy semiconductorsPhysical Review Letters, 1987
- Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band-gap energyApplied Physics Letters, 1987
- Ordered structures in GaAs0.5Sb0.5 alloys grown by organometallic vapor phase epitaxyApplied Physics Letters, 1986