Study of interrupted MOVPE growth of InGaAs/InP superlattice
- 1 November 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 124 (1-4) , 547-552
- https://doi.org/10.1016/0022-0248(92)90515-k
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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- Growth and analysis of quantum well structuresJournal of Crystal Growth, 1991
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- A study of layer composition of InGaAs/InP multiquantum wells grown by metalorganic chemical vapor deposition using double-crystal x-ray diffraction theory and experimentJournal of Applied Physics, 1988
- Optical properties of (AlAs)n(GaAs)n superlattices grown by metalorganic chemical vapor depositionJournal of Applied Physics, 1985