High-efficiency Al0.22Ga0.78As solar cells grown by molecular beam epitaxy
- 2 July 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (1) , 52-54
- https://doi.org/10.1063/1.103575
Abstract
The quality of pn junction photodetectors made of Al0.2Ga0.8As has been investigated as a first step in the optimization of tandem solar cells. We have obtained 1 sun AM1.5 efficiencies of 16.1% for 0.25 cm2 Al0.22Ga0.78As solar cells fabricated from molecular beam epitaxy (MBE) material. This efficiency is 3.2 percentage points higher than the previously best reported efficiency of 12.9% for an Al0.2Ga0.8As solar cell fabricated from MBE material.Keywords
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