Infrared Absorption in Gallium Phosphide
- 1 January 1969
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 34 (2) , 815-824
- https://doi.org/10.1002/pssb.19690340244
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Formation of Built-in Light-emitting Junctions in Solution-grown GaP Containing Shallow Donors and AcceptorsIBM Journal of Research and Development, 1966
- Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende StructuresPhysical Review B, 1966
- Optical Properties due to Donor Electrons in SemiconductorsJournal of the Physics Society Japan, 1965
- Infrared Absorption of Semiconductor at Low TemperaturesJournal of the Physics Society Japan, 1964
- Free-Carrier Infrared Absorption in III-V Semiconductors IV. Inter-Conduction Band TransitionsJournal of the Physics Society Japan, 1964
- Infra-red Absorption in Gallium Phosphide-Gallium Arsenide Alloys I. Absorption in n-type MaterialProceedings of the Physical Society, 1963
- Optical absorption in n-type gallium phosphideJournal of Physics and Chemistry of Solids, 1959
- Theory of the Infrared Absorption of Carriers in Germanium and SiliconPhysical Review B, 1955