Direct oxinitride synthesis by multipulse excimer laser irradiation of silicon wafers in a nitrogen-containing ambient environment
- 1 September 1990
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (5) , 2509-2511
- https://doi.org/10.1063/1.346518
Abstract
The direct synthesis of silicon oxinitride films by multipulse excimer (λ=308 nm) laser irradiation in a nitrogen‐containing ambient gas is reported featuring characteristics consistent with potential application in microelectronics.This publication has 11 references indexed in Scilit:
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