Two-Photon Absorption Cross Section for Silane Under Pulsed Arf (193 nm) Excimer Laser Irradiation
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Vacuum ultraviolet absorption cross sections of SiH4, GeH4, Si2H6, and Si3H8The Journal of Chemical Physics, 1986
- A simple conceptual model for two-photon absorptionAmerican Journal of Physics, 1986
- Excimer-Laser-Induced Chemical Vapor Deposition of Hydrogenated Amorphous SiliconJapanese Journal of Applied Physics, 1985
- Growth of Hydrogenated Amorphous Silicon Films by ArF Excimer Laser Photodissociation of DisilaneJapanese Journal of Applied Physics, 1984
- Low-temperature growth of polycrystalline Si and Ge films by ultraviolet laser photodissociation of silane and germaneApplied Physics Letters, 1982
- Silane purification via laser-induced chemistryApplied Physics Letters, 1978