On the measurement of the conductivity density of states of evaporated amorphous silicon films
- 1 December 1975
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 72 (2) , 761-770
- https://doi.org/10.1002/pssb.2220720237
Abstract
Data are analyzed on the conductivity across the barrier between amorphous and crystal Si. The analysis assumes that variable range hopping near the Fermi level is the dominant conductivity mechanism in the evaporated amorphous Si film and band conductivity is dominant in the crystal. The density of states is found to be 1.2 × 1020eV−1cm−3at the Fermi level in amorphous Si. The barrier heights are found to be larger when the crystal is p‐type. This is in contrast to the somewhat analogous case of metal–semiconductor Schottky barrier diodes in which n‐type crystals give higher barriers. The possibility of applications in circuits is pointed out.Keywords
This publication has 26 references indexed in Scilit:
- Schottky barriers and plasmonsJournal of Vacuum Science and Technology, 1974
- Phenomenology of metal-semiconductor electrical barriersJournal of Vacuum Science and Technology, 1974
- Amorphous Silicon-Insulator Interface StudiesPhysica Status Solidi (a), 1974
- Field-effect conductance change in amorphous siliconApplied Physics Letters, 1974
- rf-sputtered amorphous Si/crystalline Si junctionsJournal of Vacuum Science and Technology, 1974
- Electrical Properties and Anisotropy in Amorphous Si andAlloyPhysical Review B, 1973
- Thermally assisted hopping transport in disordered systemsThe European Physical Journal A, 1973
- Amorphous-crystalline silicon junctionsElectronics Letters, 1972
- Electrode effects on amorphous germaniumThin Solid Films, 1972
- Structural, Electrical, and Optical Properties of Amorphous Germanium FilmsPhysical Review B, 1970