Amorphous Silicon-Insulator Interface Studies
- 16 August 1974
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 24 (2) , K177-K179
- https://doi.org/10.1002/pssa.2210240262
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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- Electronic transport and state distribution in amorphous Si filmsJournal of Non-Crystalline Solids, 1972
- Use of the field effect to determine the energy dependence of localized state density in amorphous semiconductorsSolid State Communications, 1972
- Investigation of the localised state distribution in amorphous Si filmsJournal of Non-Crystalline Solids, 1972
- Amorphous-crystalline silicon junctionsElectronics Letters, 1972
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967
- FREQUENCY DEPENDENCE OF THE IMPEDANCE OF DISTRIBUTED SURFACE STATES IN MOS STRUCTURESApplied Physics Letters, 1966