Spectrophotometric evaluation of phosphorus profiles in silicon
- 1 January 1979
- journal article
- Published by Elsevier in Analytica Chimica Acta
- Vol. 104 (1) , 139-144
- https://doi.org/10.1016/s0003-2670(01)83823-x
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Concentration profiles of implanted phosphorus in siliconPhysica Status Solidi (a), 1974
- An automated radiochemical technique for measurement of impurity concentration profilesNuclear Instruments and Methods, 1973
- Technique used in Hall effect analysis of ion implanted Si and GeSolid-State Electronics, 1970
- Detailed analysis of thin phosphorus-diffused layers in p-type siliconSolid-State Electronics, 1961
- Measurement of Sheet Resistivities with the Four-Point ProbeBell System Technical Journal, 1958